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Profil
| Derzeitige Stellung | Professor W-3 und Äquivalente |
|---|---|
| Fachgebiet | Halbleiterphysik,Elektronische Halbleiter, Bauelemente und Schaltungen, Integrierte Systeme, Sensorik, Theoretische Elektrotechnik |
| Keywords | metalorganic chemical vapor deposition, compound semiconductors, laser diodes, LEDs, transistors |
Aktuelle Kontaktadresse
| Land | USA |
|---|---|
| Ort | Atlanta |
| Universität/Institution | Georgia Institute of Technology |
| Institut/Abteilung | Electrical and Computer Engineering |
Gastgeber*innen während der Förderung
| Prof. Dr. Günther Tränkle | Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Berlin |
|---|---|
| Prof. Dr. Michael Kneissl | Institut für Festkörperphysik, Technische Universität Berlin, Berlin |
| Beginn der ersten Förderung | 01.02.2014 |
Programm(e)
| 2013 | Humboldt-Forschungspreis-Programm für Naturwissenschaftler*innen aus den USA |
|---|
Projektbeschreibung der*des Nominierenden
| Professor Dupuis is an international authority in the area of optoelectronic and electronic devices as well as III-V semiconductor materials. He developed the first high-performance metalorganic chemical vapor deposition (MOCVD) epitaxial growth systems for III-V compound semiconductors and demonstrated the first III-V solar cells and laser diodes, including the first room-temperature quantum-well lasers, grown by MOCVD, a process which is currently in worldwide use for the large-scale production of visible LEDs, high-speed optical communication system components and solar cells. In Germany, Professor Dupuis will focus on the wide-bandgap III-N compound semiconductor system and the creation of novel nanostructure devices in these materials. |